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| MITSUBISHI SOFT RECOVERY DIODES FD500JV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE FD500JV-90DA OUTLINE DRAWING Dimensions in mm 3.5 0.2 2.2 0.2DEPTH 0.4MIN TYPE NAME 26 0.5 0.4MIN 47 75MAX 3.5 0.2 2.2 0.2DEPTH IF(AV) Average forward current ....................... 500A VRRM Repetitive peak reverse voltage ................... 4500V QRR Reverse recovery charge ................. 1500C Press pack type APPLICATION Clamp diode for GCT Thyristor High-power inverters Power supplies as high frequency rectifiers MAXIMUM RATINGS Symbol VRRM VRSM VR(DC) Symbol IF(RMS) IF(AV) IFSM I2t di/dt Tj Tstg -- -- Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Parameter RMS forward current Average forward current Surge forward current Current-squared, time integration Critical rate of rise of reverse recovery current Junction temperature Storage temperature Mounting force required Weight Conditions Applied for all conduction angles f = 60Hz, sine wave = 180, Tf =76C One half cycle at 60Hz, Tj =125C IFM =500A, VR 2250V, Tj = 125C (Fig. 1 and Fig. 2) Voltage class 4500 4500 3600 Ratings 785 500 10 4.2x 105 2000 -20 ~ 125 -40 ~ 150 22 ~ 28 -- Unit V V V Unit A A kA A2s A/s C C kN g (Recommended value 23.5kN) Typical 530g Feb.1999 MITSUBISHI SOFT RECOVERY DIODES FD500JV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE ELECTRICAL CHARACTERISTICS Symbol IRRM VFM QRR Erec tb/ta VFP Rth(j-f) Parameter Repetitive peak reverse current Forward voltage Reverse recovery charge Reverse recovery loss Soft recovery rate Forward recovery voltage Thermal resistance Test conditions VRM = 4500V, Tj = 125C IFM = 1570A, Tj = 125C IFM = 500A, di/dt = 1000A/s, VR = 2250V, Tj = 125C (Refer to Fig. 1 and Fig. 2) di/dt = 1000A/s, Tj = 25C Junction to fin Limits Min. -- -- -- -- -- -- -- Typ. -- -- -- 4.0 2 100 -- Max. 80 3.5 1500 -- -- -- .027 Unit mA V C J/P -- V C/W Fig. 1 (Definition of reverse recovery waveform) Fig. 2 (Reverse recovery test circuit) QRR = (trr x IRM)/2 L(line) 50%IFM IFM trr ta 0 IRM di/dt(0~50%IFM) (Note 1) VD = 2250V L(load) FD500JV Rc CDi GCT Cc Cc : 6F Rc = 2 tb 50%IRM 90%IRM di/dt = VD/L(line) = 2250V/1.125H = 2000A (Note 1) Note 1 In case of 2000A/s, definition of di/dt is by VD and inductance value of L (line) as follows. di/dt = VD/L (line) = 2250V/1.125H = 2000A/s Feb.1999 MITSUBISHI SOFT RECOVERY DIODES FD500JV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE PERFORMANCE CURVES Erec VS IF (TYP.) REVERSE RECOVERY LOSS Erec (J/P) FORWARD CURRENT (A) MAXIMUM FORWARD CHARACTERISTICS 104 7 5 3 Tj = 125C 2 103 7 5 3 2 102 7 5 3 2 101 0 1 2 3 4 5 6 7 8 Tj = 25C 10 9 CONDITION VR = 2250V, Tj =125C 8 di/dt = 1000A/s 7 6 5 4 3 2 1 0 0 200 400 600 800 1000 1200 FORWARD VOLTAGE (V) FORWARD CURRENT IF (A) MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN) 100 2 3 5 7 101 0.04 THERMAL IMPEDANCE (C/ W) REVERSE RECOVERY CHARGE QRR (C) QRR VS IF (TYP.) 2600 CONDITION 2400 2200 VR = 2250V, Tj =125C di/dt = 1000A/s 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 200 400 600 0.035 0.03 0.025 0.02 0.015 0.01 0.005 0 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 TIME (S) 800 1000 1200 FORWARD CURRENT IF (A) Feb.1999 |
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